ESDA6V8UR 3-lines, uni-directional, ultra-low capacitance, transient voltage suppressors descriptions the ESDA6V8UR is a transient voltage suppressors (tvs) which provide a very high level protection for sensitive electronic components that may be subjected to electrostatic discharge (esd). it is designed to replace multilayer varistors (mlv) in consumer equipments applications such as mobile phone, notebook, pad, stb, lcd tv etc. the ESDA6V8UR was past esd transient voltage up to 8kv (contact) according to iec61000-4-2 and withstand peak current up to 3a for 8/20us pulse according to iec61000-4-5. the ESDA6V8UR is available in dfn1.6*1.6 package. standard products are pb-free and halogen-free. features ? id/d-/d+ working voltage : 5v peak power (tp=8/20us) : 45w max. peak current (tp=8/20us) : 3a max. transient protection iec61000-4-2 : 15kv air : 8kv contact ? vbus working voltage : 12v peak power (tp=8/20us) : 155w max. peak current (tp=8/20us) : 4.5a max. transient protection iec61000-4-2 : 30kv air : 30kv contact ? ultra-low clamping voltage ? low leakage current ? small package dfn1.6*1.6 pin configuration (top view) ur = device code ** = week(01~52) marking order information device package shipping ESDA6V8UR-6/tr dfn1.6*1.6 3000/tape&reel applications ? mobile phone ? pad ? notebook ? stb ? lcd tv ? digital camera ? other electronics equipments 2 id 13 4 5 6 d- d+ nc nc vbus gnd ur ** 6 2 3 gnd 1 1 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute maximum ratings electronics characteristics (ta=25 o c, unless otherwise noted) parameter symbol rating unit junction temperature t j 125 o c operating temperature t op -40~85 o c lead temperature t l 260 o c storage temperature t stg -55~150 o c id/d-/d+ to gnd peak pulse power (tp=8/20us) ppk 45 w peak pulse current (tp=8/20us) ipp 3 a esd voltage iec61000-4-2 (contact) v esd 8 kv esd voltage iec61000-4-2 (air) v esd 15 kv vbus to gnd peak pulse power (tp=8/20us) ppk 155 w peak pulse current (tp=8/20us) ipp 4.5 a esd voltage iec61000-4-2 (contact) v esd 30 kv esd voltage iec61000-4-2 (air) v esd 30 kv parameter symbol condition min. typ. max. unit id/d-/d+ to gnd reverse maximum working voltage v rwm 5 v reverse leakage current i r v rwm =5v 1 ua reverse breakdown voltage v br i t =1ma 6.5 8.0 8.8 v forward voltage v f i f =10ma 0.55 0.9 1.25 v ipp=1a tp=8/20us 11 v clamping voltage v c ipp=3a tp=8/20us 15 v junction capacitance c j id/d-/d+ to gnd 0.7 0.9 pf vbus to gnd reverse maximum working voltage v rwm 12 v reverse leakage current i r v rwm =12v 50 na reverse breakdown voltage v br i t =1ma 15 16.5 18 v forward voltage v f i f =10ma 0.55 0.9 1.25 v ipp=1a tp=8/20us 21 v clamping voltage v c ipp=4.5a tp=8/20us 35 v junction capacitance c j vbus to gnd 25 35 pf ESDA6V8UR 2 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
8/20us waveform iec61000-4-2 waveform t ypical characteristics (ta=25 o c, unless otherwise noted) clamping voltage vs. peak pulse current id/d-/d+ to gnd non-repetitive peak pulse power vs. pulse time id/d-/d+ to gnd capacitance vs. reveres voltage id/d-/d+ to gnd power derating vs. temperature id/d-/d+ to gnd t 60ns 30ns tr=0.7~1ns 10 90 100 peak pulse current (%) 0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60 70 80 90 100 110 duration=20us front times=1.25*( t90-t10) =8us peak pulse current (%) peak pulse time (us) 0 25 50 75 100 125 150 0 20 40 60 80 100 % of rated power t a - ambient temperature ( o c) 01234 0 5 10 15 20 pulse waveform: tp=8/20us v c - clamping voltage (v) ipp - peak pulse current (a) 012345 0.2 0.4 0.6 0.8 1.0 f signal =1mhz v signal =50mvrms c - junction capacitance (pf) v r - reverse voltage (v) 1 10 100 1000 1 10 100 1000 peak pulse power (w) pulse duration(us) ESDA6V8UR 3 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
esd clamping (iec61000-4-2 +8kv contact) id/d-/d+ to gnd esd clamping (iec61000-4-2 -8kv contact) id/d-/d+ to gnd clamping voltage vs. peak pulse current vbus to gnd capacitance vs. reveres voltage vbus to gnd capacitance vs. reveres voltage vbus to gnd power derating vs. temperature vbus to gnd 0 25 50 75 100 125 150 0 20 40 60 80 100 % of rated power t a - ambient temperature ( o c) 012345 0 10 20 30 40 f signal =1mhz v signal =50mvrms c - junction capacitance (pf) v r - reverse voltage (v) 1 10 100 1000 1 10 100 1000 peak pulse power (w) pulse duration(us) 012345 0 10 20 30 40 pulse waveform: tp=8/20us v c - clamping voltage (v) ipp - peak pulse current (a) ESDA6V8UR 4 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
esd clamping (iec61000-4-2 +8kv contact) vbus to gnd esd clamping (iec61000-4-2 -8kv contact) vbus to gnd ESDA6V8UR 5 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package outline dimensions dfn1.6*1.6 recommend pcb layout (unit: mm) dimensions in millimeter symbol min. typ. max. a 6 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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